Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• plenty of room to explore variations. We have discussed the importance of G as a figure of merit. This parameter provides the calibration of cantilever tip motion, which is an important part in design optimization. A good design must also be fabricated at the wafer scale with a reasonable number of

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• transmittance of 94% and increased the bandgap energy from 2.76 to 2.88 eV at 120 mJ. The annealing treatment decreased the resistivity from 15.63 × 10−4 to 1.73 × 10−4 Ω/cm−1. Additionally, the figure of merit of the ITO/Mo structure improved significantly from 6.63 × 10−4 Ω−1 of the as-deposited sample to

• ] who used ITO/Ag and ITO/Ni bilayers. The figure of merit (FOM) is a quantitative value that can evaluate the performance of the device. From the sheet resistance (Rs) and the optical transmittance (T), the quality of the thin film can be calculated using the FOM relation in Equation 5 [33][34][35]: It

• can be noted that the figure of merit increased with the increase of laser energy from 0 to 120 mJ. This increase is due to the simultaneous improvement of transmittance and resistivity. The highest value obtained is 17.6 × 10−3 Ω−1 after annealing at 120 mJ. Above 120 mJ, the figure of merit

Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• achieved with the highest sensitivity of 453 nm/RIU and a maximum figure of merit (FOM) of 9808. Such dual-band high-Q resonator is expected to have promising applications in multi-wavelength sensing and nonlinear optics. Keywords: bound states in the continuum; dual band; high quality factor; localized

• length h, which is necessary for refractive index sensing applications. When the QBIC is applied to refractive index sensing, it enables more sensitive detection owing to its high figure of merit (FOM), the physical mechanism of which uses resonant position variations to detect changes in the refractive

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• quantitatively compared to results found in literature that are obtained using other, more complex graphene film fabrication methods, and is found to occur with a percolation exponent and percolative figure of merit that are of the same order as results in literature. A maximum optical transparency of 82.4% at a

• achievable with LB assembly of graphene films made from solution-dispersed material, for a reasonable electrical conductivity. Comparisons of our obtained percolative figure of merit and percolation exponent with those observed in literature reveal that the quality of the films obtained with our demonstrated

• is the percolative figure of merit (FOM) as described by De and Coleman [45] and n is the percolation exponent. We fit the above two equations to our data in the two observed regimes independently. The solid red line in Figure 6 is a fit to Equation 1 which indicates the bulk regime, whereas the

Fabrication and testing of polymer microneedles for transdermal drug delivery

• Vahid Ebrahiminejad,
• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2022, 13, 629–640, doi:10.3762/bjnano.13.55

• elastic modulus. Buckling failure load is the most important figure of merit used to determine the margin of safety of MNs. Figure 5a shows the results of mechanical quasi-static compression tests for the single replicated MN. The results revealed both near-tip yield stress failure, presumed due to the

Identifying diverse metal oxide nanomaterials with lethal effects on embryonic zebrafish using machine learning

• Richard Liam Marchese Robinson,
• Haralambos Sarimveis,
• Philip Doganis,
• Xiaodong Jia,
• Marianna Kotzabasaki,
• Christiana Gousiadou,
• Stacey Lynn Harper and
• Terry Wilkins

Beilstein J. Nanotechnol. 2021, 12, 1297–1325, doi:10.3762/bjnano.12.97

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• Abstract Tin selenide (SnSe) has thermoelectric (TE) and photovoltaic (PV) applications due to its exceptional advantages, such as the remarkable figure of merit (ZT ≈ 2.6 at 923 K) and excellent optoelectronic properties. In addition, SnSe is nontoxic, inexpensive, and relatively abundant. These aspects

• ]. The main obstacle is, however, to create effective, stable, as well as affordable TE materials. The efficiency of TE materials and devices is quantified by the dimensionless figure of merit (ZT) which is represented by where S, σ, κtot, κe, κl, and T represent the Seebeck coefficient, total electrical

• filtering [21], and quantum confinement effects [22]). Many of these methods focus on reducing the lattice thermal conductivity and try to preserve a high power factor (PF). On the other hand, a high figure of merit can be obtained in pristine TE materials that have intrinsically minimal thermal

Paper-based triboelectric nanogenerators and their applications: a review

• Jing Han,
• Nuo Xu,
• Yuchen Liang,
• Mei Ding,
• Junyi Zhai,
• Qijun Sun and
• Zhong Lin Wang

Beilstein J. Nanotechnol. 2021, 12, 151–171, doi:10.3762/bjnano.12.12

• and power density) is virtually important and it is the major figure of merit for energy harvesting. The electric output performance of P-TENGs for energy harvesting and functionalities and a comparison between P-TENGs and polymer-based TENGs are summarized in Table 1 and Table 2, respectively. Due to

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq. The carrier concentration increased more than twice when the Al–Ag layer was inserted between the ITO layers. The figure of merit of the IAAI multilayer contact has been found to be high at 76.4 × 10−3 Ω−1 compared to a pure ITO contact (69.4

• × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices. Keywords: annealing; DC sputtering; figure of merit; indium tin oxide (ITO); multilayer structure; RF sputtering; Introduction Transparent

• ]. Further treatments beyond 500 °C resulted in the degradation of the film structure due to the appearance of metallic nanoparticles on the surface of the multilayer [4][28]. Furthermore, Cho et al. estimated a figure of merit of 12.28 × 10−4 Ω−1 for a 5.07 nm thick intermediate Al film after annealing at

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• figure of merit. Moreover, the thermoelectric properties of a single QD connected to graphene electrodes have been studied within the framework of the Hartree–Fock approximation using the EOM technique, focusing on the Coulomb blockade regime [39]. It was established that the Wiedemann–Franz law is not

• fulfilled for the graphene contacts. In addition, the thermoelectric transport properties of a noninteracting QD coupled to pure and gapped graphene electrodes have been analyzed based on the Hartree–Fock approximation by the EOM technique [40]. A significant enhancement of the figure of merit was reported

Plasmonic nanosensor based on multiple independently tunable Fano resonances

• Lin Cheng,
• Zelong Wang,
• Xiaodong He and
• Pengfei Cao

Beilstein J. Nanotechnol. 2019, 10, 2527–2537, doi:10.3762/bjnano.10.243

• figure of merit (FOM) is 1199. All these capabilities are considered to be excellent in comparison to similar, previously reported nanosensors. Thus, our structure has great potential for on-chip detection with high performance. Moreover, our study on the characteristics of the different types of

• performance. It is worth mentioning that the sensitivity, defined as S = Δλ/Δn, and figure of merit (FOM) are important parameters for sensors. Here Δn represents the variation of the refractive index in the surrounding environment and Δλ is the wavelength shift caused by the change of refractive index. The

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• challenge of production and procurement of highly ordered, very pure crystals of macroscopic dimensions with very low defect density, and accordingly only few measurements of such type were reported [5][6][7][8]. Here, we obtain information on intrinsic mobilities, the main figure of merit of OSC materials

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• of the MoO3 monolayer exhibit an evident anisotropic behavior which is caused by the similar anisotropy of the electrical and thermal conductivity. The thermoelectric materials figure of merit (ZT) value along the x- and the y-axis is 0.72 and 0.08 at 300 K, respectively. Moreover, the creation of

• measured by a figure of merit (ZT) defined as ZT = S2σT/κ, where S, σ, T and κ represent the Seebeck coefficient, electrical conductivity, temperature and thermal conductivity, respectively [2][3]. In the past decade, great efforts have been made to boost the capabilities of thermoelectric materials

Graphynes: an alternative lightweight solution for shock protection

• Kang Xia,
• Haifei Zhan,
• Aimin Ji,
• Jianli Shao,
• Yuantong Gu and
• Zhiyong Li

Beilstein J. Nanotechnol. 2019, 10, 1588–1595, doi:10.3762/bjnano.10.154

• impact velocity. Considering the different morphologies and densities, the specific or gravimetric penetration energy is determined, which is calculated as Apparently, is a figure of merit to evaluate the impact energy delocalization ability of a material as more sample mass in addition to the

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• efficiency of the material could be expressed in terms of figure-of-merit, ZT, defined as dimensionless quantity ZT = S2·σ·T/κ , where S is the thermopower (Seebeck coefficient), σ is the electrical conductivity, T is the absolute temperature and κ is the thermal conductivity. There were many concepts for

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit. Keywords: bismuth telluride

• ; nanoparticles; power factor; thermoelectric power; Introduction Bismuth telluride (Bi2Te3) is an important semiconductor widely used as thermoelectric (TE) material for room-temperature applications to convert waste heat into electricity. The efficiency of a TE material can be defined by figure of merit (ZT

• = S2σT/k) and to enhance figure of merit (ZT), one needs to increase the power factor (S2σ, where S is the Seebeck coefficient or thermopower, σ is the electrical conductivity) or to decrease thermal conductivity (k). In bulk, all three parameters (S, σ, k) are interdependent. In bulk Bi2Te3, ZT is close

Magnetic and luminescent coordination networks based on imidazolium salts and lanthanides for sensitive ratiometric thermometry

• Pierre Farger,
• Cédric Leuvrey,
• Mathieu Gallart,
• Pierre Gilliot,
• Guillaume Rogez,
• João Rocha,
• Duarte Ananias,
• Pierre Rabu and
• Emilie Delahaye

Beilstein J. Nanotechnol. 2018, 9, 2775–2787, doi:10.3762/bjnano.9.259

• thermometric parameters Δ1, Δ2 and Δ3 in the range of 250–340 K is shown in Figure 7a. The corresponding relative sensitivity, defined as Sr = |∂Δ/∂T|/Δ [63], a figure of merit used to compare the performance of ratiometric luminescent thermometers, is plotted in Figure 7b. Δ2 and Δ3 exhibit very good

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• circulates in the plane of the disk and is confined inside it. We also evaluated the electric field enhancement inside the cylinder, defined as the ratio between the total field E and the incident field E0, as a figure of merit to assess the performance of the ring-assisted antenna. The maximum field

Evaluation of replicas manufactured in a 3D-printed nanoimprint unit

• Manuel Caño-García,
• Morten A. Geday,
• Manuel Gil-Valverde,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2018, 9, 1573–1581, doi:10.3762/bjnano.9.149

• specific procedures for measuring these magnitudes. The underlying clue is to gather some simple numbers qualifying the samples. The original idea was to propose a single figure of merit, but this turned out unfeasible, since many parameters are derived from numerical data through image processing of an

• to complement the single figure of merit with other figures referring to specific aspects of manufacturing. The parameters obtained from direct measurements are physical dimensions of the grating: pitch, blazing angle and back angle, i.e., the angle opposite to the blazing angle. The remaining

• graphs are figures of merit: an averaged figure of merit including all parameters (bottom left) and a separate set of figures of merit for every parameter (bottom right). As mentioned above, a single figure of merit does not seem the best solution since rather dissimilar parameters are considered. Yet in

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• context, point out that SRON:B has a B-concentration that is just 30% of the P-concentration in SRON:P. Although the initial dopant concentration in the Si-rich oxide is not the figure of merit but the substitutional incorporation in the NCs, these results still indicate that B-doping is less efficient

Cathodoluminescence as a probe of the optical properties of resonant apertures in a metallic film

• Kalpana Singh,
• Evgeniy Panchenko,
• Babak Nasr,
• Amelia Liu,
• Lukas Wesemann,
• Timothy J. Davis and
• Ann Roberts

Beilstein J. Nanotechnol. 2018, 9, 1491–1500, doi:10.3762/bjnano.9.140

• other optical methods. These modes are of intrinsic interest, however, and have also attracted attention due to their relatively high quality factor and long lifetimes that may underpin new optical sensors with a higher sensitivity and figure-of-merit than devices utilising “bright” dipole modes [35

Design of photonic microcavities in hexagonal boron nitride

• Sejeong Kim,
• Milos Toth and
• Igor Aharonovich

Beilstein J. Nanotechnol. 2018, 9, 102–108, doi:10.3762/bjnano.9.12

• full photonic bandgap between the first and the second lowest photonic energy bands even when the effective index contrast is low [31]. The combination of a high Q-factor and a low refractive index enables a broad range of applications such as flexible photonic crystal devices and high figure of merit

Refractive index sensing and surface-enhanced Raman spectroscopy using silver–gold layered bimetallic plasmonic crystals

• Somi Kang,
• Sean E. Lehman,
• Matthew V. Schulmerich,
• An-Phong Le,
• Tae-woo Lee,
• Stephen K. Gray,
• Rohit Bhargava and
• Ralph G. Nuzzo

Beilstein J. Nanotechnol. 2017, 8, 2492–2503, doi:10.3762/bjnano.8.249

• , respectively. (c) FDTD-computed top (x–y) intensity distribution at 5 nm away from the surface of Au50 and Ag40Au10 quasi-3D PCs at λ = 821 nm and 840 nm. Figure-of-merit (FOM, Δ%T·nm/RIU) for PCs with different ratios of Ag and Au. Raman intensity (counts) at 1073 cm−1 and 1573 cm−1 for five different full-3D

A review of demodulation techniques for amplitude-modulation atomic force microscopy

• Michael G. Ruppert,
• David M. Harcombe,
• Michael R. P. Ragazzon,
• S. O. Reza Moheimani and
• Andrew J. Fleming

Beilstein J. Nanotechnol. 2017, 8, 1407–1426, doi:10.3762/bjnano.8.142

• cycle, corresponding to a maximum tracking bandwidth f−3dB = fc. However, this figure of merit needs to be assessed with caution as it does not reflect the noise present in the amplitude estimate due to insufficient filtering of mixing products. For instance, the lock-in amplifier can only be used up to

• -running sample rate achieved by the digital signal processing system. Where applicable, latencies arising from fixed time-delays in the implementation of the methods are highlighted. The tracking bandwidth is defined as the frequency f−3dB, at which the amplitude estimate drops by −3 dB. This figure of

• merit is important to determine both the speed of convergence and the amount of noise suppression in the estimate. This relationship is clearly identified by plotting the total integrated noise of the amplitude estimate against the tracking bandwidth for a known input noise density. Lastly, the

Highly compact refractive index sensor based on stripe waveguides for lab-on-a-chip sensing applications

• Chamanei Perera,
• Kristy Vernon,
• Elliot Cheng,
• Juna Sathian,
• Esa Jaatinen and
• Timothy Davis

Beilstein J. Nanotechnol. 2016, 7, 751–757, doi:10.3762/bjnano.7.66

• wavelength of 633 nm relative to air [24]. We observed that the intensity difference between arms changes linearly with the change in the refractive index of the solution (w.r.t. PMMA). Figure of Merit (FOM) relative to the intensity change was calculated by dividing the difference in the relative intensity